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Sensors 2012, 12(2), 2162-2174; doi:10.3390/s120202162

A Highly Sensitive CMOS Digital Hall Sensor for Low Magnetic Field Applications

1
School of Electronic Science & Engineering, Nanjing University, Nanjing 210093, China
2
College of Electronic Science & Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210003, China
*
Author to whom correspondence should be addressed.
Received: 22 December 2011 / Revised: 20 January 2012 / Accepted: 21 January 2012 / Published: 15 February 2012
(This article belongs to the Section Physical Sensors)
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Abstract

Integrated CMOS Hall sensors have been widely used to measure magnetic fields. However, they are difficult to work with in a low magnetic field environment due to their low sensitivity and large offset. This paper describes a highly sensitive digital Hall sensor fabricated in 0.18 μm high voltage CMOS technology for low field applications. The sensor consists of a switched cross-shaped Hall plate and a novel signal conditioner. It effectively eliminates offset and low frequency 1/f noise by applying a dynamic quadrature offset cancellation technique. The measured results show the optimal Hall plate achieves a high current related sensitivity of about 310 V/AT. The whole sensor has a remarkable ability to measure a minimum ±2 mT magnetic field and output a digital Hall signal in a wide temperature range from −40 °C to 120 °C. View Full-Text
Keywords: Hall sensor; CMOS technology; dynamic offset cancellation; chopped technique Hall sensor; CMOS technology; dynamic offset cancellation; chopped technique
This is an open access article distributed under the Creative Commons Attribution License (CC BY 3.0).

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MDPI and ACS Style

Xu, Y.; Pan, H.-B.; He, S.-Z.; Li, L. A Highly Sensitive CMOS Digital Hall Sensor for Low Magnetic Field Applications. Sensors 2012, 12, 2162-2174.

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