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Sensors 2011, 11(8), 8127-8142; doi:10.3390/s110808127
Article

Dual-Functional On-Chip AlGaAs/GaAs Schottky Diode for RF Power Detection and Low-Power Rectenna Applications

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Received: 15 July 2011 / Revised: 8 August 2011 / Accepted: 12 August 2011 / Published: 18 August 2011
(This article belongs to the Section Physical Sensors)
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Abstract

A Schottky diode has been designed and fabricated on an n-AlGaAs/GaAs high-electron-mobility-transistor (HEMT) structure. Current-voltage (I-V) measurements show good device rectification, with a Schottky barrier height of 0.4349 eV for Ni/Au metallization. The differences between the Schottky barrier height and the theoretical value (1.443 eV) are due to the fabrication process and smaller contact area. The RF signals up to 1 GHz are rectified well by the fabricated Schottky diode and a stable DC output voltage is obtained. The increment ratio of output voltage vs input power is 0.2 V/dBm for all tested frequencies, which is considered good enough for RF power detection. Power conversion efficiency up to 50% is obtained at frequency of 1 GHz and input power of 20 dBm with series connection between diode and load, which also shows the device’s good potential as a rectenna device with further improvement. The fabricated n-AlGaAs/GaAs Schottky diode thus provides a conduit for breakthrough designs for RF power detectors, as well as ultra-low power on-chip rectenna device technology to be integrated in nanosystems.
Keywords: AlGaAs/GaAs; HEMT; Schottky diode; RF power detector; rectenna AlGaAs/GaAs; HEMT; Schottky diode; RF power detector; rectenna
This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

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Hashim, A.M.; Mustafa, F.; Rahman, S.F.A.; Rahman, A.R.A. Dual-Functional On-Chip AlGaAs/GaAs Schottky Diode for RF Power Detection and Low-Power Rectenna Applications. Sensors 2011, 11, 8127-8142.

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