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Sensors 2011, 11(1), 876-885; doi:10.3390/s110100876
Article

Hall Sensors for Extreme Temperatures

,
 and
*
Institute of Physics, Poznan University of Technology, Nieszawska 13a, 61-965 Poznan, Poland
* Author to whom correspondence should be addressed.
Received: 19 November 2010 / Revised: 13 December 2010 / Accepted: 10 January 2011 / Published: 14 January 2011
(This article belongs to the Section Physical Sensors)
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Abstract

We report on the preparation of the first complete extreme temperature Hall sensor. This means that the extreme-temperature magnetic sensitive semiconductor structure is built-in an extreme-temperature package especially designed for that purpose. The working temperature range of the sensor extends from −270 °C to +300 °C. The extreme-temperature Hall-sensor active element is a heavily n-doped InSb layer epitaxially grown on GaAs. The magnetic sensitivity of the sensor is ca. 100 mV/T and its temperature coefficient is less than 0.04 %/K. This sensor may find applications in the car, aircraft, spacecraft, military and oil and gas industries.
Keywords: Hall sensors; n-InSb/GaAs; extreme temperatures; magnetic sensors Hall sensors; n-InSb/GaAs; extreme temperatures; magnetic sensors
This is an open access article distributed under the Creative Commons Attribution License (CC BY 3.0).
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Jankowski, J.; El-Ahmar, S.; Oszwaldowski, M. Hall Sensors for Extreme Temperatures. Sensors 2011, 11, 876-885.

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