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Sensors 2011, 11(1), 876-885; doi:10.3390/s110100876
Article

Hall Sensors for Extreme Temperatures

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Received: 19 November 2010 / Revised: 13 December 2010 / Accepted: 10 January 2011 / Published: 14 January 2011
(This article belongs to the Section Physical Sensors)
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Abstract

We report on the preparation of the first complete extreme temperature Hall sensor. This means that the extreme-temperature magnetic sensitive semiconductor structure is built-in an extreme-temperature package especially designed for that purpose. The working temperature range of the sensor extends from −270 °C to +300 °C. The extreme-temperature Hall-sensor active element is a heavily n-doped InSb layer epitaxially grown on GaAs. The magnetic sensitivity of the sensor is ca. 100 mV/T and its temperature coefficient is less than 0.04 %/K. This sensor may find applications in the car, aircraft, spacecraft, military and oil and gas industries.
Keywords: Hall sensors; n-InSb/GaAs; extreme temperatures; magnetic sensors Hall sensors; n-InSb/GaAs; extreme temperatures; magnetic sensors
This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

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Jankowski, J.; El-Ahmar, S.; Oszwaldowski, M. Hall Sensors for Extreme Temperatures. Sensors 2011, 11, 876-885.

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