Sensors 2010, 10(11), 10155-10180; doi:10.3390/s101110155
Review

Large Lateral Photovoltaic Effect in Metal-(Oxide-)Semiconductor Structures

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Received: 26 September 2010; in revised form: 14 October 2010 / Accepted: 25 October 2010 / Published: 11 November 2010
(This article belongs to the Special Issue Photodetectors and Imaging Technologies)
This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
Abstract: The lateral photovoltaic effect (LPE) can be used in position-sensitive detectors to detect very small displacements due to its output of lateral photovoltage changing linearly with light spot position. In this review, we will summarize some of our recent works regarding LPE in metal-semiconductor and metal-oxide-semiconductor structures, and give a theoretical model of LPE in these two structures.
Keywords: lateral phtotvoltaic effect (LPE); metal-semiconductor (MS); metal-oxide-semiconductor (MOS)
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MDPI and ACS Style

Yu, C.; Wang, H. Large Lateral Photovoltaic Effect in Metal-(Oxide-)Semiconductor Structures. Sensors 2010, 10, 10155-10180.

AMA Style

Yu C, Wang H. Large Lateral Photovoltaic Effect in Metal-(Oxide-)Semiconductor Structures. Sensors. 2010; 10(11):10155-10180.

Chicago/Turabian Style

Yu, Chongqi; Wang, Hui. 2010. "Large Lateral Photovoltaic Effect in Metal-(Oxide-)Semiconductor Structures." Sensors 10, no. 11: 10155-10180.


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