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Sensors 2010, 10(11), 10155-10180; doi:10.3390/s101110155

Large Lateral Photovoltaic Effect in Metal-(Oxide-)Semiconductor Structures

 and *
Department of Physics, The State Key Laboratory on Fiber Optic Local Area Communication Networks and Advanced Optical Communication Systems, Key Laboratory for Thin Film and Microfabrication Technology of the Ministry of Education, Shanghai Jiao Tong University, 800 Dongchuan Road, Shanghai 200240, China
* Author to whom correspondence should be addressed.
Received: 26 September 2010 / Revised: 14 October 2010 / Accepted: 25 October 2010 / Published: 11 November 2010
(This article belongs to the Special Issue Photodetectors and Imaging Technologies)


The lateral photovoltaic effect (LPE) can be used in position-sensitive detectors to detect very small displacements due to its output of lateral photovoltage changing linearly with light spot position. In this review, we will summarize some of our recent works regarding LPE in metal-semiconductor and metal-oxide-semiconductor structures, and give a theoretical model of LPE in these two structures.
Keywords: lateral phtotvoltaic effect (LPE); metal-semiconductor (MS); metal-oxide-semiconductor (MOS) lateral phtotvoltaic effect (LPE); metal-semiconductor (MS); metal-oxide-semiconductor (MOS)
This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

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Yu, C.; Wang, H. Large Lateral Photovoltaic Effect in Metal-(Oxide-)Semiconductor Structures. Sensors 2010, 10, 10155-10180.

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