Next Article in Journal
Extended Target Recognition in Cognitive Radar Networks
Next Article in Special Issue
Photo-Detectors for Time of Flight Positron Emission Tomography (ToF-PET)
Previous Article in Journal
Sensor Based Framework for Secure Multimedia Communication in VANET
Previous Article in Special Issue
Error Analysis of Terrestrial Laser Scanning Data by Means of Spherical Statistics and 3D Graphs
Article Menu

Export Article

Open AccessReview
Sensors 2010, 10(11), 10155-10180; doi:10.3390/s101110155

Large Lateral Photovoltaic Effect in Metal-(Oxide-)Semiconductor Structures

Department of Physics, The State Key Laboratory on Fiber Optic Local Area Communication Networks and Advanced Optical Communication Systems, Key Laboratory for Thin Film and Microfabrication Technology of the Ministry of Education, Shanghai Jiao Tong University, 800 Dongchuan Road, Shanghai 200240, China
*
Author to whom correspondence should be addressed.
Received: 26 September 2010 / Revised: 14 October 2010 / Accepted: 25 October 2010 / Published: 11 November 2010
(This article belongs to the Special Issue Photodetectors and Imaging Technologies)

Abstract

The lateral photovoltaic effect (LPE) can be used in position-sensitive detectors to detect very small displacements due to its output of lateral photovoltage changing linearly with light spot position. In this review, we will summarize some of our recent works regarding LPE in metal-semiconductor and metal-oxide-semiconductor structures, and give a theoretical model of LPE in these two structures.
Keywords: lateral phtotvoltaic effect (LPE); metal-semiconductor (MS); metal-oxide-semiconductor (MOS) lateral phtotvoltaic effect (LPE); metal-semiconductor (MS); metal-oxide-semiconductor (MOS)
This is an open access article distributed under the Creative Commons Attribution License (CC BY 3.0).

Scifeed alert for new publications

Never miss any articles matching your research from any publisher
  • Get alerts for new papers matching your research
  • Find out the new papers from selected authors
  • Updated daily for 49'000+ journals and 6000+ publishers
  • Define your Scifeed now

SciFeed Share & Cite This Article

MDPI and ACS Style

Yu, C.; Wang, H. Large Lateral Photovoltaic Effect in Metal-(Oxide-)Semiconductor Structures. Sensors 2010, 10, 10155-10180.

Show more citation formats Show less citations formats

Related Articles

Article Metrics

Article Access Statistics

1

Comments

[Return to top]
Sensors EISSN 1424-8220 Published by MDPI AG, Basel, Switzerland RSS E-Mail Table of Contents Alert
Back to Top