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Int. J. Mol. Sci. 2018, 19(2), 566; https://doi.org/10.3390/ijms19020566

ON the Nature of Ionic Liquid Gating of La2−xSrxCuO4

1
Huygens-Kamerlingh Onnes Laboratorium, Universiteit Leiden, Postbus 9504, 2300 RA Leiden, The Netherlands
2
MESA+ Institute for Nanotechnology, University of Twente, P.O. Box 217, 7500 AE Enschede, The Netherlands
*
Author to whom correspondence should be addressed.
Received: 7 January 2018 / Revised: 7 February 2018 / Accepted: 9 February 2018 / Published: 13 February 2018
(This article belongs to the Special Issue Ionic Liquids 2018 and Selected Papers from ILMAT IV)
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Abstract

Ionic liquids have recently been used as means of modulating the charge carrier properties of cuprates. The mechanism behind it, however, is still a matter of debate. In this paper we report experiments on ionic liquid gated ultrathin La2−xSrxCuO4 films. Our results show that the electrostatic part of gating has limited influence in the conductance of the cuprate in the gate voltage range of 0 to 2 V. A non-electrostatic mechanism takes over for gate voltages below 2 V. This mechanism most likely changes the oxygen concentration of the film. The results presented are in line with previous X-ray based studies on ionic liquid gating induced oxygenation of the cuprate materials YBa2Cu3O7−x and La2−xSrxCuO4. View Full-Text
Keywords: La2−xSrxCuO4; ionic liquid; electric double layer; oxygenation La2−xSrxCuO4; ionic liquid; electric double layer; oxygenation
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This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. (CC BY 4.0).
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Atesci, H.; Gelling, W.; Coneri, F.; Hilgenkamp, H.; van Ruitenbeek, J.M. ON the Nature of Ionic Liquid Gating of La2−xSrxCuO4. Int. J. Mol. Sci. 2018, 19, 566.

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