Next Article in Journal
Fluorescence Lifetime Correlation Spectroscopy (FLCS): Concepts, Applications and Outlook
Previous Article in Journal
Fragment-Based Screening by Protein Crystallography: Successes and Pitfalls
Article Menu

Export Article

Open AccessArticle
Int. J. Mol. Sci. 2012, 13(10), 12880-12889; doi:10.3390/ijms131012880

Substrate Temperature Dependent Surface Morphology and Photoluminescence of Germanium Quantum Dots Grown by Radio Frequency Magnetron Sputtering

1
Ibn Sina Institute for Fundamental Science Studies, Universiti Teknologi Malaysia, Skudai, Johor 81100, Malaysia
2
Advanced Optical Material Research Group, Department of Physics, Faculty of Science, Universiti Teknologi Malaysia, Skudai, Johor 81100, Malaysia
3
Medical Implant Technology Group, Faculty of Bioscience and Medical Engineering, Universiti Teknologi Malaysia, Skudai, Johor 81310, Malaysia
*
Author to whom correspondence should be addressed.
Received: 16 August 2012 / Revised: 19 September 2012 / Accepted: 21 September 2012 / Published: 9 October 2012
(This article belongs to the Section Material Sciences and Nanotechnology)
View Full-Text   |   Download PDF [1292 KB, uploaded 19 June 2014]   |  

Abstract

The visible luminescence from Ge nanoparticles and nanocrystallites has generated interest due to the feasibility of tuning band gap by controlling the sizes. Germanium (Ge) quantum dots (QDs) with average diameter ~16 to 8 nm are synthesized by radio frequency magnetron sputtering under different growth conditions. These QDs with narrow size distribution and high density, characterized using atomic force microscopy (AFM) and field emission scanning electron microscopy (FESEM) are obtained under the optimal growth conditions of 400 °C substrate temperature, 100 W radio frequency powers and 10 Sccm Argon flow. The possibility of surface passivation and configuration of these dots are confirmed by elemental energy dispersive X-ray (EDX) analysis. The room temperature strong visible photoluminescence (PL) from such QDs suggests their potential application in optoelectronics. The sample grown at 400 °C in particular, shows three PL peaks at around ~2.95 eV, 3.34 eV and 4.36 eV attributed to the interaction between Ge, GeOx manifesting the possibility of the formation of core-shell structures. A red shift of ~0.11 eV in the PL peak is observed with decreasing substrate temperature. We assert that our easy and economic method is suitable for the large-scale production of Ge QDs useful in optoelectronic devices. View Full-Text
Keywords: Ge quantum dots; visible photoluminescence; RMS roughness Ge quantum dots; visible photoluminescence; RMS roughness
This is an open access article distributed under the Creative Commons Attribution License (CC BY 3.0).

Scifeed alert for new publications

Never miss any articles matching your research from any publisher
  • Get alerts for new papers matching your research
  • Find out the new papers from selected authors
  • Updated daily for 49'000+ journals and 6000+ publishers
  • Define your Scifeed now

SciFeed Share & Cite This Article

MDPI and ACS Style

Samavati, A.; Othaman, Z.; Ghoshal, S.K.; Dousti, M.R.; Kadir, M.R.A. Substrate Temperature Dependent Surface Morphology and Photoluminescence of Germanium Quantum Dots Grown by Radio Frequency Magnetron Sputtering. Int. J. Mol. Sci. 2012, 13, 12880-12889.

Show more citation formats Show less citations formats

Related Articles

Article Metrics

Article Access Statistics

1

Comments

[Return to top]
Int. J. Mol. Sci. EISSN 1422-0067 Published by MDPI AG, Basel, Switzerland RSS E-Mail Table of Contents Alert
Back to Top