Selective Growth of α-Sexithiophene by Using Silicon Oxides Patterns
AbstractA process for fabricating ordered organic films on large area is presented. The process allows growing sexithiophene ultra-thin films at precise locations on patterned Si/SiOx substrates by driving the orientation of growth. This process combines the parallel local anodic oxidation of Si/SiOx substrates with the selective arrangement of molecular ultra-thin film. The former is used to fabricate silicon oxide arrays of parallel lines of 400 nm in width over an area of 1 cm2. Selective growth arises from the interplay between kinetic growth parameters and preferential interactions with the patterned surface. The result is an ultra-thin film of organic molecules that is conformal to the features of the fabricated motives.
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Albonetti, C.; Barbalinardo, M.; Milita, S.; Cavallini, M.; Liscio, F.; Moulin, J.-F.; Biscarini, F. Selective Growth of α-Sexithiophene by Using Silicon Oxides Patterns. Int. J. Mol. Sci. 2011, 12, 5719-5735.
Albonetti C, Barbalinardo M, Milita S, Cavallini M, Liscio F, Moulin J-F, Biscarini F. Selective Growth of α-Sexithiophene by Using Silicon Oxides Patterns. International Journal of Molecular Sciences. 2011; 12(9):5719-5735.Chicago/Turabian Style
Albonetti, Cristiano; Barbalinardo, Marianna; Milita, Silvia; Cavallini, Massimiliano; Liscio, Fabiola; Moulin, Jean-François; Biscarini, Fabio. 2011. "Selective Growth of α-Sexithiophene by Using Silicon Oxides Patterns." Int. J. Mol. Sci. 12, no. 9: 5719-5735.