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Int. J. Mol. Sci. 2011, 12(9), 5719-5735; doi:10.3390/ijms12095719

Selective Growth of α-Sexithiophene by Using Silicon Oxides Patterns

CNR-ISMN, Institute for the Study of Nanostructured Materials, Via P. Gobetti 101, Bologna I-40129, Italy
CNR-IMM, Institute for Microelectronics and Microsystems, Via P. Gobetti 101, Bologna I-40129, Italy
GKSS, Forschungszentrum Geesthacht GmbH, Geesthacht D-21502, Germany
Author to whom correspondence should be addressed.
Received: 1 August 2011 / Revised: 25 August 2011 / Accepted: 29 August 2011 / Published: 6 September 2011
(This article belongs to the Special Issue Molecular Self-Assembly 2011)
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A process for fabricating ordered organic films on large area is presented. The process allows growing sexithiophene ultra-thin films at precise locations on patterned Si/SiOx substrates by driving the orientation of growth. This process combines the parallel local anodic oxidation of Si/SiOx substrates with the selective arrangement of molecular ultra-thin film. The former is used to fabricate silicon oxide arrays of parallel lines of 400 nm in width over an area of 1 cm2. Selective growth arises from the interplay between kinetic growth parameters and preferential interactions with the patterned surface. The result is an ultra-thin film of organic molecules that is conformal to the features of the fabricated motives.
Keywords: sexithiophene; atomic force microscopy; pattern; template; annealing sexithiophene; atomic force microscopy; pattern; template; annealing

This is an open access article distributed under the Creative Commons Attribution License (CC BY 3.0).

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MDPI and ACS Style

Albonetti, C.; Barbalinardo, M.; Milita, S.; Cavallini, M.; Liscio, F.; Moulin, J.-F.; Biscarini, F. Selective Growth of α-Sexithiophene by Using Silicon Oxides Patterns. Int. J. Mol. Sci. 2011, 12, 5719-5735.

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