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Int. J. Mol. Sci. 2011, 12(9), 5719-5735; doi:10.3390/ijms12095719

Selective Growth of α-Sexithiophene by Using Silicon Oxides Patterns

1,* , 1
1 CNR-ISMN, Institute for the Study of Nanostructured Materials, Via P. Gobetti 101, Bologna I-40129, Italy 2 CNR-IMM, Institute for Microelectronics and Microsystems, Via P. Gobetti 101, Bologna I-40129, Italy 3 GKSS, Forschungszentrum Geesthacht GmbH, Geesthacht D-21502, Germany
* Author to whom correspondence should be addressed.
Received: 1 August 2011 / Revised: 25 August 2011 / Accepted: 29 August 2011 / Published: 6 September 2011
(This article belongs to the Special Issue Molecular Self-Assembly 2011)
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A process for fabricating ordered organic films on large area is presented. The process allows growing sexithiophene ultra-thin films at precise locations on patterned Si/SiOx substrates by driving the orientation of growth. This process combines the parallel local anodic oxidation of Si/SiOx substrates with the selective arrangement of molecular ultra-thin film. The former is used to fabricate silicon oxide arrays of parallel lines of 400 nm in width over an area of 1 cm2. Selective growth arises from the interplay between kinetic growth parameters and preferential interactions with the patterned surface. The result is an ultra-thin film of organic molecules that is conformal to the features of the fabricated motives.
Keywords: sexithiophene; atomic force microscopy; pattern; template; annealing sexithiophene; atomic force microscopy; pattern; template; annealing
This is an open access article distributed under the Creative Commons Attribution License (CC BY) which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

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Albonetti, C.; Barbalinardo, M.; Milita, S.; Cavallini, M.; Liscio, F.; Moulin, J.-F.; Biscarini, F. Selective Growth of α-Sexithiophene by Using Silicon Oxides Patterns. Int. J. Mol. Sci. 2011, 12, 5719-5735.

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