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Molecules 2016, 21(9), 1166; doi:10.3390/molecules21091166

Single-Walled Carbon-Nanotubes-Based Organic Memory Structures

1
School of Electronic Engineering, Bangor University, Dean Street, Bangor LL57 1UT, UK
2
Department of Electrical Engineering, United Arab Emirates University, Al Ain, UAE
3
Department of Mathematics, Statistics and Physics, Qatar University, Doha, Qatar
4
Masdar Institute, Abu Dhabi, UAE
5
School of Engineering and Computing Sciences, Durham University, Durham DH1 3LE, UK
*
Author to whom correspondence should be addressed.
Academic Editor: Jianyong Ouyang
Received: 1 August 2016 / Revised: 24 August 2016 / Accepted: 29 August 2016 / Published: 2 September 2016
(This article belongs to the Special Issue Organic Memory Devices)
View Full-Text   |   Download PDF [3432 KB, uploaded 2 September 2016]   |  

Abstract

The electrical behaviour of organic memory structures, based on single-walled carbon-nanotubes (SWCNTs), metal–insulator–semiconductor (MIS) and thin film transistor (TFT) structures, using poly(methyl methacrylate) (PMMA) as the gate dielectric, are reported. The drain and source electrodes were fabricated by evaporating 50 nm gold, and the gate electrode was made from 50 nm-evaporated aluminium on a clean glass substrate. Thin films of SWCNTs, embedded within the insulating layer, were used as the floating gate. SWCNTs-based memory devices exhibited clear hysteresis in their electrical characteristics (capacitance–voltage (CV) for MIS structures, as well as output and transfer characteristics for transistors). Both structures were shown to produce reliable and large memory windows by virtue of high capacity and reduced charge leakage. The hysteresis in the output and transfer characteristics, the shifts in the threshold voltage of the transfer characteristics, and the flat-band voltage shift in the MIS structures were attributed to the charging and discharging of the SWCNTs floating gate. Under an appropriate gate bias (1 s pulses), the floating gate is charged and discharged, resulting in significant threshold voltage shifts. Pulses as low as 1 V resulted in clear write and erase states. View Full-Text
Keywords: organic memory devices; single-walled carbon-nanotubes; pentacene; charge transfer organic memory devices; single-walled carbon-nanotubes; pentacene; charge transfer
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This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. (CC BY 4.0).

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MDPI and ACS Style

Fakher, S.; Nejm, R.; Ayesh, A.; AL-Ghaferi, A.; Zeze, D.; Mabrook, M. Single-Walled Carbon-Nanotubes-Based Organic Memory Structures. Molecules 2016, 21, 1166.

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