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Entropy 2015, 17(7), 4786-4808; doi:10.3390/e17074786

Modeling and Analysis of Entropy Generation in Light Heating of Nanoscaled Silicon and Germanium Thin Films

1
Instituto de Energías Renovables, Universidad Nacional Autónoma de México, Privada de Xochicalco S/N, Temixco 62588, Morelos, Mexico
2
Centro de Investigación en Ciencias, Universidad Autónoma del Estado de Morelos, Av. Universidad 1001, Col. Chamilpa, Cuernavaca 62209, Morelos, Mexico
*
Author to whom correspondence should be addressed.
Academic Editors: Morin Celine, Bernard Desmet and Fethi Aloui
Received: 26 March 2015 / Revised: 13 June 2015 / Accepted: 25 June 2015 / Published: 9 July 2015
(This article belongs to the Special Issue Entropy Generation in Thermal Systems and Processes 2015)
View Full-Text   |   Download PDF [1046 KB, uploaded 9 July 2015]   |  

Abstract

In this work, the irreversible processes in light heating of Silicon (Si) and Germanium (Ge) thin films are examined. Each film is exposed to light irradiation with radiative and convective boundary conditions. Heat, electron and hole transport and generation-recombination processes of electron-hole pairs are studied in terms of a phenomenological model obtained from basic principles of irreversible thermodynamics. We present an analysis of the contributions to the entropy production in the stationary state due to the dissipative effects associated with electron and hole transport, generation-recombination of electron-hole pairs as well as heat transport. The most significant contribution to the entropy production comes from the interaction of light with the medium in both Si and Ge. This interaction includes two processes, namely, the generation of electron-hole pairs and the transferring of energy from the absorbed light to the lattice. In Si the following contribution in magnitude comes from the heat transport. In Ge all the remaining contributions to entropy production have nearly the same order of magnitude. The results are compared and explained addressing the differences in the magnitude of the thermodynamic forces, Onsager’s coefficients and transport properties of Si and Ge. View Full-Text
Keywords: thin films; entropy production; heat transport; electron-hole generation; light matter interaction; irreversible processes; semiconductors thin films; entropy production; heat transport; electron-hole generation; light matter interaction; irreversible processes; semiconductors
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This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. (CC BY 4.0).

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MDPI and ACS Style

Nájera-Carpio, J.E.; Vázquez, F.; Figueroa, A. Modeling and Analysis of Entropy Generation in Light Heating of Nanoscaled Silicon and Germanium Thin Films. Entropy 2015, 17, 4786-4808.

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